IPP65R280E6 datasheet

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О ДАТАШИТЕ

• Маркировка
  IPP65R280E6
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPP65R280E6 Continuous Drain Current: 13.8 A Current - Continuous Drain (id) @ 25?° C: 13.8A Drain To Source Voltage (vdss): 650V Drain-source Breakdown Voltage: 700 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 45nC @ 10V Gate-source Breakdown Voltage: 20 V Id(max) @ Tc=25?°c: 13.8 A Idpuls (max): 39.0 A Input Capacitance (ciss) @ Vds: 950pF @ 100V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: * Package: TO-220 Package / Case: * Packages: PG-TO220-3 Power - Max: 104W Power Dissipation: 104 W Rds On (max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V Rds(on) @ Tj=25?°c Vgs=10: 280.0 mOhm Resistance Drain-source Rds (on): 0.25 Ohms Series: CoolMOS?„? Transistor Polarity: N-Channel Vds (max): 650.0 V Vgs(th) (max) @ Id: 3.5V @ 440?µA RoHS: yes Drain-Source Breakdown Voltage: 700 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 0.25 Ohms Part # Aliases: IPP65R280E6XK IPP65R280E6XKSA1 SP000795268
• Количество страниц
  17 шт.
• Форматы файла
  HTML, PDF

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